F. Haque, N. T. T. Hoang, J. Ji, and M. Mativenga, “Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH3NH3PbI3,” IEEE electron device letters, 40, 11, 1756, November (2019). > Journal Papers

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We used thin-film transistors (TFTs) to understand the effect of precursor composition on ion migration in the hybrid perovskite CH3NH3PbI3(MAPbI3). For all the precursorcompositionswe investigated (i.e.MAI/PbI2 ratios of 0.5, 0.8, 1.0, and 1.2), the TFTs exhibited anomalous hysteresis in their current-voltage (I-V) characteristics, indicating mixed ionic-electronic conduction. The hysteresis in the TFTs with MAI/PbI2 = 0.5 was the largest, followed by that of the TFTs with ratios of 1.2, 1.0, and 0.8. Although residual PbI2 was the source of hysteresis in the PbI2-rich TFTs (MAI/PbI2 = 0.5), we conclude that it may enhance electronic conduction and minimize ion migration when present in small amounts (as in the case of MAI/PbI2 = 0.8). Ion vacancy defects in grain boundaries are pathways for ionmigration and the PbI2 residues passivate these defects, therebyminimizing the vacancy-mediatedmigration of ions in the MAPbI3.