2019 J. Ji, F. Haque, ,N. T. T. Hoang, and M. Mativenga, “Ambipolar Transport in Methylammonium Lead Iodide Thin Film Transistors,” Crystals, 9, 10, 539, October (2019).
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We report clear room temperature ambipolar transport in ambient-air processed methylammonium lead iodide (MAPbI3) thin-film transistors (TFTs) with aluminum oxide gate-insulators and indium-zinc-oxide source/drain electrodes. The high ionicity of the MAPbI3 leads to p-type and n-type self-doping, and depending on the applied bias we show that simultaneous or selective transport of electrons and/or holes is possible in a single MAPbI3 TFT. The electron transport (n-type), however, is slightly more pronounced than the hole transport (p-type), and the respective channel resistances range from 5–11 and 44–55 MΩ/µm. Both p-type and n-type TFTs show good on-state characteristics for low driving voltages. It is also shown here that the on-state current of the n-type and p-type TFTs is highest in the slightly PbI2-rich and MAI-rich films, respectively, suggesting controllable n-type or p-type transport by varying precursor ratio.
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- PrevF. Haque, N. T. T. Hoang, J. Ji, and M. Mativenga, “Effect of Precursor Composition on Ion Migration in Hybrid Perovskite CH3NH3PbI3,” IEEE electron device letters, 40, 11, 1756, November (2019).
- NextN. T. T. Hoang, F. Haque, J. Ji, and M. Mativenga, “Fast-Switching Mixed A-Cation Organic-Inorganic Hybrid Perovskite TFTs,” IEEE electron device letters, 40, 6, 917, June (2019).