2020 F. Haque, and M. Mativenga “Halide perovskite memtransistor enabled by ion migration,” Japanese Journal of Applied Physics, 59, 081002, July (2020)
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We exploit the problem of ion migration in the halide perovskite CH3NH3PbI3 (MAPbI3) by developing a memtransistor (i.e. hybrid memristor and transistor) with the field-effect transistor geometry. Application of an electric field between the drain and the source results in resistive switching
from a high resistance state (HRS) to a low resistance state (LRS) due to dynamic redistribution of ions in the MAPbI3 layer. The gate enables
continuous tuning of this LRS across several orders of magnitude. The LRS persists after removing the power supply and the memtransistor can
be switched back to the HRS by reversing the bias polarity. Excellent state retention is demonstrated for 104 s and a switching ratio (HRS/LRS) of
102 is maintained for 1000 cycles, thus confirming good retention and cyclic endurance for the resistive switching behavior. Continuous tuning of
the state conductance is essential for neuromorphic architectures and hard to achieve with two-terminal memristors.
© 2020 The Japan Society of Applied Physics
from a high resistance state (HRS) to a low resistance state (LRS) due to dynamic redistribution of ions in the MAPbI3 layer. The gate enables
continuous tuning of this LRS across several orders of magnitude. The LRS persists after removing the power supply and the memtransistor can
be switched back to the HRS by reversing the bias polarity. Excellent state retention is demonstrated for 104 s and a switching ratio (HRS/LRS) of
102 is maintained for 1000 cycles, thus confirming good retention and cyclic endurance for the resistive switching behavior. Continuous tuning of
the state conductance is essential for neuromorphic architectures and hard to achieve with two-terminal memristors.
© 2020 The Japan Society of Applied Physics
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- PrevF. Haque, S. Lim, S. Lee, Y. Park and M. Mativenga, "Highly Sensitive and Ambient Air-Processed Hybrid Perovskite TFT Temperature Sensor," IEEE Electron Device Letters, 41, 7, 1086, July (2020).
- NextM. Mativenga, J. Ji, N. T. t. Hoang, F. Haque, “Ambient Air Stability of Hybrid Perovskite Thin-Film Transistors by Ambient Air Processing,” Advanced Materials Interfaces, 7, 6, 1901777, March (2020).