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Journal Papers 목록
Year
No
Publication Name
2014
12
X. Li, D. Geng, M. Mativenga, Y. Chen, and J. Jang, “Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits,” IEEE Electron Device Lett., 35, 12 1242, December (2014).
2014
11
S. Lee, M. Mativenga, and J. Jang, “Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure," IEEE Electron Device Lett., 35, 9, 930, September (2014).
2014
10
M. Mativenga, S. H. Ha, D. Geng, D. H. Kang, R. Mruthyunjaya, G. N. Heiler, T. J. Tredwell, and J. Jang, “Infinite output resistance of corbino thin-film transistors with an amorphous-InGaZnO active layer for large-area AMOLED displays,” IEEE Trans. E
2014
9
S. An, M. Mativenga, Y. Kim, and J. Jang, “Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation,” Appl. Phys. Lett. 105, 5, 053507, August (2014).
2014
8
M. Mativenga, S. An, S. Lee, J. Um, D. Geng, R. K. Mruthyunjaya, G. N. Heiler, T. J. Tredwell, and Jin Jang, “Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method,” IEEE Trans Electron Devices, 6
2014
7
J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, “Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors,” Solid State Commun., 194, 54, June (2014).
2014
6
S. Jin, M. Mativenga, and J. Jang, “Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation amorphous-InGaZnO TFTs,” IEEE Electron Device Lett., 35, 5, 560, May (2014).
2014
5
J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, “Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature,” J. Appl. Phys., 115, 134502, April (2014).
2014
4
X. Li, D. Geng, M. Mativenga, and J. Jang, “High-Speed Dual-Gate a-IGZO TFT-Based Circuits with Top-Gate Offset Structure,” IEEE Electron Device Lett. 35, 4, 461, April (2014).
2014
3
J. H. Ryu, G. J. Lee, W. S. Kim, H. E. Lim, S. H. Lee, M. Mativenga, J. Jang, K. C. Park, and H. K. Park, “All-carbon hybrid electrode consisting of carbon nanotube on graphite foil for flexible electrochemical applications,” Materials, 7, 1975, March
2014
2
S. Hong, S Lee, M. Mativenga, J. Jang, “Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving,” IEEE Electron Device Lett. 35, 1, 93, January (2014).
2014
1
H.-Y. Jeong, B.-Y. Lee, Y.-J. Lee, J.-I. Lee, M.-S. Yang, I.-B. Kang, M. Mativenga, J. Jang, “Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer,” Appl. Phys. Lett. 104, 022115, January (2014).
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