Journal Papers 1 페이지
본문 바로가기
팝업레이어 알림
팝업레이어 알림이 없습니다.
경희대학교 정보디스플레이학과
SIGN UP
LOGIN
HOME
Introduction
소개
About MNDL
Contact us
Links
Research
연구
Scope
Projects
Facilities
Publications
출판물
Journal Papers
patent
Conference Papers
Awards
Members
구성원
Professor
Students
Interns
Alumni
Board
게시판
Notice
Gallery
Introduction
소개
About MNDL
Contact us
Research
연구
Scope
Projects
Facilities
Publications
출판물
Journal Papers
patent
Conference Papers
Awards
Members
구성원
Professor
Students
Interns
Alumni
Notice Board
공지사항
SIGN UP
LOGIN
PUBLICATIONS
Publication List for Micro & Nano Devices Lab.
PUBLICATIONS
Journal Papers
Patents
Conference Papers
Awards
Journal Papers
Journal Papers 카테고리
All
2010
2011
2012
열린 분류
2013
2014
2015
2016
2017
2018
2019
2020
2021
2022
게시판 검색
Journal Papers 목록
Year
No
Publication Name
2013
7
M. Mativenga, S. An, and J. Jang, “Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity,” IEEE Electron Device Lett., 34, 12, 1533, December (2013).
2013
6
S. H. Ha, D. H. Kang, I. K., J. U. Han, M. Mativenga, and J. Jang, "Channel Length Dependent Bias-stability of Self-aligned Coplanar a-IGZO TFTs," IEEE/OSA Journal of Display Technology, 9, 12, 985, Decembere (2013).
2013
5
M. J. Seok, M. Mativenga, D. Geng, and J. Jang, "Achieving High Performance Oxide TFT-Based Inverters by Use of Dual-Gate Configurations With Floating and Biased Secondary Gates," IEEE Trans. Electron Devices, 60, 11, 3787, November (2013).
2013
4
J. G. Um, M. Mativenga, and J. Jang, "Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc oxide thin-film transistors from negative bias illumination stress," Appl. Phys. Lett., 103, 033501, July (2013).
2013
3
S. H. Park, M. Mativenga, and J. Jang, "Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping," Appl. Phys. Lett., 103, 043509, July (2013).
2013
2
D. H. Kang, J. U. Han, M. Mativenga, S. H. Ha, and J. Jang, “Threshold voltage dependence on channel length in amorphous-indium gallium-zinc-oxide thin-film transistors,” Appl. Phys. Lett. 102, 083508, March (2013).
2013
1
M. Mativenga, Sejin Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102, 023503, January (2013).
Search
검색대상
Title
Contents
Title+Contents
검색어
필수
검색
닫기
About MNDL
Contact us
개인정보취급방침
이용약관
Room 724, Space21 (College of Sciences), 26 Kyungheedae-ro, Dongadaemun-gu, Seoul 02447, South Korea.
Tel. 02-961-9642
E-mail. mallory@khu.ac.kr
© 2021. MICRO & NANO DEVICES LAB. ALL RIGHTS RESERVED.
상단으로