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Year
No
Publication Name
2014
33
M. Mativenga, S. An, S. Lee, J. Um, D. Geng, R. K. Mruthyunjaya, G. N. Heiler, T. J. Tredwell, and Jin Jang, “Intrinsic Channel Mobility of Amorphous, In–Ga–Zn–O Thin-Film Transistors by a Gated Four-Probe Method,” IEEE Trans Electron Devices, 6
2014
32
J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, “Field-induced carrier generation in amorphous-InGaZnO4 thin-film transistors,” Solid State Commun., 194, 54, June (2014).
2014
31
S. Jin, M. Mativenga, and J. Jang, “Reduction of Positive-Bias-Stress Effects in Bulk-Accumulation amorphous-InGaZnO TFTs,” IEEE Electron Device Lett., 35, 5, 560, May (2014).
2014
30
J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, “Defect generation in amorphous-indium-gallium-zinc-oxide thin-film transistors by positive bias stress at elevated temperature,” J. Appl. Phys., 115, 134502, April (2014).
2014
29
X. Li, D. Geng, M. Mativenga, and J. Jang, “High-Speed Dual-Gate a-IGZO TFT-Based Circuits with Top-Gate Offset Structure,” IEEE Electron Device Lett. 35, 4, 461, April (2014).
2014
28
J. H. Ryu, G. J. Lee, W. S. Kim, H. E. Lim, S. H. Lee, M. Mativenga, J. Jang, K. C. Park, and H. K. Park, “All-carbon hybrid electrode consisting of carbon nanotube on graphite foil for flexible electrochemical applications,” Materials, 7, 1975, March
2014
27
S. Hong, S Lee, M. Mativenga, J. Jang, “Reduction of Negative Bias and Light Instability of a-IGZO TFTs by Dual-Gate Driving,” IEEE Electron Device Lett. 35, 1, 93, January (2014).
2014
26
H.-Y. Jeong, B.-Y. Lee, Y.-J. Lee, J.-I. Lee, M.-S. Yang, I.-B. Kang, M. Mativenga, J. Jang, “Coplanar amorphous-indium-gallium-zinc-oxide thin film transistor with He plasma treated heavily doped layer,” Appl. Phys. Lett. 104, 022115, January (2014).
2013
25
M. Mativenga, S. An, and J. Jang, “Bulk Accumulation a-IGZO TFT for High Current and Turn-On Voltage Uniformity,” IEEE Electron Device Lett., 34, 12, 1533, December (2013).
2013
24
S. H. Ha, D. H. Kang, I. K., J. U. Han, M. Mativenga, and J. Jang, "Channel Length Dependent Bias-stability of Self-aligned Coplanar a-IGZO TFTs," IEEE/OSA Journal of Display Technology, 9, 12, 985, Decembere (2013).
2013
23
M. J. Seok, M. Mativenga, D. Geng, and J. Jang, "Achieving High Performance Oxide TFT-Based Inverters by Use of Dual-Gate Configurations With Floating and Biased Secondary Gates," IEEE Trans. Electron Devices, 60, 11, 3787, November (2013).
2013
22
J. G. Um, M. Mativenga, and J. Jang, "Mechanism of positive bias stress-assisted recovery in amorphous-indium-gallium-zinc oxide thin-film transistors from negative bias illumination stress," Appl. Phys. Lett., 103, 033501, July (2013).
2013
21
S. H. Park, M. Mativenga, and J. Jang, "Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping," Appl. Phys. Lett., 103, 043509, July (2013).
2013
20
D. H. Kang, J. U. Han, M. Mativenga, S. H. Ha, and J. Jang, “Threshold voltage dependence on channel length in amorphous-indium gallium-zinc-oxide thin-film transistors,” Appl. Phys. Lett. 102, 083508, March (2013).
2013
19
M. Mativenga, Sejin Hong, and J. Jang, “High current stress effects in amorphous-InGaZnO4 thin-film transistors,” Appl. Phys. Lett. 102, 023503, January (2013).
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