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Journal Papers 목록
Year
No
Publication Name
2016
48
S. Jin, Y. Choe, S. Lee, T.-W. Kim, M. Mativenga, and J. Jang,” Lateral Grain Growth of Amorphous Silicon Films with Wide Thickness Range by Blue Laser Annealing and Application to High Performance Poly-Si TFTs,” IEEE Electron Device Lett. 37, 3, 291,
2015
47
S. Lee, X. Li, M. Mativenga, and J. Jang, “Bulk-Accumulation Oxide Thin-Film Transistor Circuits With Zero Gate-to-Drain Overlap Capacitance for High Speed,” IEEE Electron Device Lett., 36, 12, 1329, December (2015).
2015
46
Y. C. Park, J. G. Um, M. Mativenga, and J. Jang, “Modification of Electrode-Etchant for Sidewall Profile Control and Reduced Back-Channel Corrosion of Inverted-Staggered Metal-Oxide TFTs,” ECS J. Solid State Science and Technology, 4 Q124, October (20
2015
45
X. Li, M. M. Billah, M. Mativenga, D. Geng, Y.-H. Kim, T.-W. Kim, Y.-G. Seol, and J. Jang, “Highly Robust Flexible Oxide Thin-Film Transistors by Bulk Accumulation,” IEEE Electron Device Lett., 36,8, 811, August (2015).
2015
44
D. Geng, Y. F. Chen, M. Mativenga, and J. Jang, “30 μm-Pitch Oxide TFT-Based Gate Driver Design for Small-Size, High-Resolution, and Narrow-Bezel Displays,” IEEE Electron Device Lett., 36, 8, 805, August (2015).
2015
43
J. K. Um, S. Lee, S. Jin, M. Mativenga, S. Y. Oh, C. H. Lee, and J. Jang, “High-Performance Homojunction a-IGZO TFTs With Selectively Defined Low-Resistive a-IGZO Source/Drain Electrodes,” IEEE Trans. Electron Devices, 62, 7, 2212, July (2015).
2015
42
P. Migliorato, M. D. H. Chowdhury, J. G. Um, M. Seok, M. Mativenga, and J. Jang, “Characterization and Modeling of a-IGZO TFTs,” IEEE/OSA Journal of Display Technology, vol. 11, no. 6, 497, doi: 10.1109/JDT.2014.2328335. June 2015.
2015
41
J. G. Um, M. Mativenga, P. Migliorato, and J. Jang, “Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors,” J. Appl. Phys. 117, 234502, June (2015).
2015
40
M. D. H. Chowdhury, M. Mativenga, J. G. Um, R. K. Mruthyunjaya, G. N. Heiler, T. J. Tredwell, and J. Jang, “Effect of SiO2 and SiO2/SiNx passivation on the stability of amorphous indium-gallium zinc-oxide thin-film transistors under high humidity,” IE
2015
39
Y. Chen, D. Geng, M. Mativenga, and J. Jang, “High-Speed Pseudo-CMOS Circuits using Bulk Accumulation a-IGZO TFTs,” IEEE Electron Device Lett., 86, 2, 153, February (2015).
2015
38
M. Mativenga, D. Geng, B.-S. Kim, and J. Jang, “Fully-Transparent and Rollable Electronics,” ACS Applied Materials & Interfaces, 7, January 1578 (2015).
2014
37
X. Li, D. Geng, M. Mativenga, Y. Chen, and J. Jang, “Effect of Bulk-Accumulation on Switching Speed of Dual-Gate a-IGZO TFT-Based Circuits,” IEEE Electron Device Lett., 35, 12 1242, December (2014).
2014
36
S. Lee, M. Mativenga, and J. Jang, “Removal of Negative-Bias-Illumination-Stress Instability in Amorphous-InGaZnO Thin-Film Transistors by Top-Gate Offset Structure," IEEE Electron Device Lett., 35, 9, 930, September (2014).
2014
35
M. Mativenga, S. H. Ha, D. Geng, D. H. Kang, R. Mruthyunjaya, G. N. Heiler, T. J. Tredwell, and J. Jang, “Infinite output resistance of corbino thin-film transistors with an amorphous-InGaZnO active layer for large-area AMOLED displays,” IEEE Trans. E
2014
34
S. An, M. Mativenga, Y. Kim, and J. Jang, “Improvement of bias-stability in amorphous-indium-gallium-zinc-oxide thin-film transistors by using solution-processed Y2O3 passivation,” Appl. Phys. Lett. 105, 5, 053507, August (2014).
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