N. T. T. Hoang, F. Haque, and M. Mativenga, “Stability of Perovskite Thin Film Transistors,” IMID 2019, HICO, Gyeongju, Korea, August 27 – 30 (2019). > Conference Papers

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The Perovskite semiconductors offer a compelling combination of simple low-cost processing and a high electrical performance. Owing to their excellent attributes they are widely used in photovoltaic and optoelectronics devices but application in thin film transistors are hardy reported. In the few publications reporting perovskite TFTs, the CH3NH3PbI3 (here hence forth MAPbI3) has been the major player [1]–[5]. However, most of them are high-voltage driven [1]–[3] and prone to degradation due to degassing of MA. Here, we achieved high preforming MAPbI3 perovskite TFTs with Cs doping. The TFTs exhibited field effect mobility of ~4 ⅹ 10-2 cm2/V·s, turn on voltage of (VON ~8.5 V) and subthreshold voltage swing of 30 mV/dec. This was a significant improvement from the performance of the undoped perovskite TFTs, which exhibited mobility ~1 ⅹ 1 0-2 cm2/V·s, VON of ~7.5 V and SS of 318 mV/dec were achieved by the MAPbI3 TFTs. The improvement is attributed to better film morphology and reduced trap density with the incorporation of Cs cation with MA cation.