Solution-Processed CH3NH3PbI3/ZnO Phototransistor with High Photodetectivity > Conference Papers

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We report a phototransistor using the CH3NH3PbI3/ZnO heterostructure. The CH3NH3PbI3 (MAPbI3) and ZnO are deposited via low-cost solution process. MAPbI3 coated ZnO TFTs exhibited enhanced photocurrent upon exposure to white light. The heterostructure formed between perovskite and ZnO, works as an efficient electron transport layer. The device had a responsivity of 195 A/W and a high detectivity of 1.10 × 1013 Jones under white light. The high photo-responsivity and detectivity resulted from the combination of suitable optoelectronic property of MAPbI3 films and the high mobility of the spray coated ZnO films