F. Haque, S. Lim, and M. Mativenga, “Stability of Perovskite Thin Film Transistors,” IMID 2020, COEX, Seoul, Korea, August 25 – 28 (2020). > Conference Papers

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In this presentation, we will address the most important question: “What is the stability of perovskite thin film transistors?” Despite being one of the strongest contenders as the next generation semiconductor material [1], its application is still limited due to the instability arising from internal and external stimuli. Using the organicinorganic hybrid perovskite, methylammonium lead iodide (CH3NH3PbI3) as the representative perovskite, we
investigate the device stability under bias cycling, thermal and light illumination stress as well as ambient air stability. The TFTs exhibit excellent air stability during tracked for one year, while keeping in air, without a passivation layer [Fig. 1 (a)] [2]. However, hysteresis in the electrical characteristics under both positive and negative bias is substantial. Since the early studies, ion migration has been hypothesized as one possible reason for the instability of the perovskite based devices and iodine (halide) vacancies have been identified to be the predominant mobile ionic defect related to hysteresis [3], [4]. The mobile ions accumulate at the interface of the gate insulator and hinder a reliable gate-controlled conductive channel [5]. For industrial applications, stable operation is necessary, consequently, vast amount of research has focused on avoiding mobile ions and the fabrication of “hysteresis-free” devices. Beyond conventional perovskite based device other electronic devices can be fabricated exploiting the effect of mobile ions. Ambipolar photo detector, memristor, and highly sensitive temperature sensor are some example for application of the perovskite material in novel devices utilizing the opportunities arising from ion migration.