2011 M. Mativenga, M. H. Choi, J. W. Choi, and J. Jang, “Transparent Flexible Circuits Based on Amorphous-Indium–Gallium–Zinc–Oxide Thin-Film Transistors,” IEEE Electron Device Lett. Volume 32, Issue 2, Pages 170-172, Feb. 2011. (Presented in San Fra
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Award : IEEE Electron Devices Society's 2011 George E. Smith Award.
Contents : We have designed an integrated a-IGZO TFT-based Vcom driver circuit with low power consumption, narrow bezel and long-term reliability on a glass substrate. The proposed driving scheme can achieve 40% lower power consumption than the conventional driving scheme, owing to Vcom inversion. The higher mobility (> 10 cm2/ V.s) of the a-IGZO TFTs compared to a-Si:H TFTs allows the integration of smaller size devices in the gate driver circuitry, leading to displays with narrower bezels. AC driving of the buffer TFTs by clocking the nth and (n+1)th frame with 20 and 0 V, respectively, improves the lifetime of the Vcom driver circuit.
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- PrevJ. W. Choi, M. H. Choi, M. Mativenga, and J. Jang, “Demonstration of Ring Oscillator based on Flexible Amorphous-Indium-Gallium-Zinc-Oxide Thin-Film Transistors,” IMID 2010 Digest, P2-53, pp. 797. (Presented in IIsan, Korea)
- NextD. Geng, B. S. Kim, M. Mativenga, M. J. Seok, D. H. Kang and J. Jang, “67.1: Distinguished Student Paper: 40 um-pitch IGZO TFT Gate Driver for High-resolution Rollable AMOLED,” SID Symposium Digest of Technical Papers, Volume 44, Issue 1, Pages 927–