2015 S. Lee, M. Mativenga, and J. Jang, “High Current Stress-Induced Heating Effects in Thin-Film Transistors on Plastic: Oxide vs. LTPS,” ECS Trans. 2015 volume 67, issue 1, 73-78.
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Award : Poster Award- First Place in the 2015 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, Lake Tahoe, CA, June 14 - 18, 2015.
Contents : We report high current stress (HCS)-induced heating effects in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) fabricated on plastic substrates. For comparison, TFTs fabricated on glass substrates are also investigated. HCS, which is achieved by biasing the TFTs in the on state with high gate and high drain voltages, induces a lager threshold-voltage shift (ΔVTH) in TFTs on plastic compared to those on glass. The positive HCS-induced ΔVTH is attributed to joule-heating, which causes electron trapping into the gate-insulator by thermionic emission. For a drain current of 400 μA, the temperature of the active a-IGZO layer is found to reach ~221℃ for devices on plastic and only 128℃ for those on glass, which explains the larger ΔVTH induced in the devices on glass. The difference in temperature is attributed to lower heat dissipation of plastic compared to the glass, given that the former has a lower thermal conductivity than the latter. Low-temperature polysilicon (LTPS) TFTs are also investigated for comparison, and the temperature of the LTPS is found exceed that of a-IGZO – consistent with the lower thermal conductivity of LTPS. Results presented herein, therefore, provide useful information for design and modelling of oxide TFT-based flexible electronics.
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- PrevThesis Title: A study on amorphous oxide semiconductor thin-film transistors for large-area, transparent and flexible AMOLED displays.
- NextY. Choe, J. G. Um, M. Mativenga, and J. Jang, “Bendable Corbino a-IGZO TFTs,” 7th International Conference on Computer Aided Design for Thin-Film Transistor Technologies (CAD-TFT), 2016.